Microwave power InAlAs/InGaAs double heterojunction bipolar transistors with 1.5 V-low voltage operation

Author

Iwai, T. ; Shigematsu, H. ; Yamada, H. ; Tomioka, T. ; Sasa, S. ; Joshin, K. ; Fujii, T.

Author_Institution

Fujitsu Labs. Ltd., Atsugi, Japan

fYear

1995

fDate

19-21 June 1995

Firstpage

88

Lastpage

89

Abstract

We report the first demonstration of microwave power performance at an extremely low operation voltage (1.5 V) using InAlAs/InGaAs double-heterojunction bipolar transistors (DHBTs). Fabricated InAlAs/InGaAs DHBTs have a step graded collector structure which suppresses the collector-emitter offset voltage V/sub CE,offset/ of I-V characteristics, enabling us to use power devices at a low operation voltage.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; indium compounds; microwave bipolar transistors; microwave power transistors; power bipolar transistors; 1.5 V; I-V characteristics; InAlAs-InGaAs; collector-emitter offset voltage; double heterojunction bipolar transistor; low voltage operation; microwave power device; step graded collector; Doping; Double heterojunction bipolar transistors; Fingers; Indium compounds; Indium gallium arsenide; Power measurement; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference, 1995. Digest. 1995 53rd Annual

Conference_Location

Charlottesville, VA, USA

Print_ISBN

0-7803-2788-8

Type

conf

DOI

10.1109/DRC.1995.496283

Filename

496283