DocumentCode
3535342
Title
40 GHz monolithic grid amplifier
Author
Cheh-Ming Liu ; Sovero, E.A. ; Rutledge, D.B.
Author_Institution
Dept. of Electr. Eng., California Inst. of Technol., Pasadena, CA, USA
fYear
1995
fDate
19-21 June 1995
Firstpage
92
Lastpage
93
Abstract
Summary form only given. A 36-element monolithic grid amplifier has been fabricated. The peak gain is 4 dB at 40 GHz with a 3-dB bandwidth of 800 MHz. We discuss the design and measurements for the monolithic grid amplifier. The grid includes base stabilizing capacitors which result in a highly stable grid. This is the first report of a successful monolithic grid amplifier.
Keywords
bipolar MIMIC; millimetre wave power amplifiers; 4 dB; 40 GHz; 800 MHz; EHF; HBT active devices; MM-wave amplifier; base stabilizing capacitors; monolithic grid amplifier; Bandwidth; Capacitors; Frequency; Gain measurement; Heterojunction bipolar transistors; Microwave amplifiers; Microwave transistors; Polarization; Power amplifiers; Propagation losses;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference, 1995. Digest. 1995 53rd Annual
Conference_Location
Charlottesville, VA, USA
Print_ISBN
0-7803-2788-8
Type
conf
DOI
10.1109/DRC.1995.496285
Filename
496285
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