Growth of GaN nanostructures on graphene

Author

Patsha, Avinash ; Sahoo, P. ; Madapu, Kishore K. ; Dhara, S. ; Tyagi, A.K.

Author_Institution

Surface & Nanosci. Div., Indira Gandhi Centre for Atomic Res., Kalpakkam, India

fYear

2011

fDate

28-30 Nov. 2011

Firstpage

553

Lastpage

555

Abstract

GaN nanostruetures with different morphologies are grown on few layer graphene (FLG) as template, using chemical- vapor-deposition technique in a self catalytic process using the large surface energy of graphene. Raman and photoluminescence studies reveal wurtzite GaN phase. Morphologies of these nanostructures varied depending on the number of layers in each template. Photoluminescence study reveals that growth occurs without deterioration of FLG layers and no incorporation of carbon in GaN nanostructures.

Keywords

III-V semiconductors; Raman spectra; catalysis; chemical vapour deposition; gallium compounds; nanofabrication; nanostructured materials; photoluminescence; semiconductor growth; surface energy; wide band gap semiconductors; C; FLG layers; GaN; Raman spectroscopy; chemical-vapor-deposition technique; nanostructures; photoluminescence; self catalytic process; surface energy; wurtzite phase; Nanostructures; Photoluminescence; GaN; Raman spectroscopy; gallium nitride; graphene; nanostructures; photoluminescence;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanoscience, Engineering and Technology (ICONSET), 2011 International Conference on

Conference_Location

Chennai

Print_ISBN

978-1-4673-0071-1

Type

conf

DOI

10.1109/ICONSET.2011.6168029

Filename

6168029