DocumentCode :
3535377
Title :
Growth of GaN nanostructures on graphene
Author :
Patsha, Avinash ; Sahoo, P. ; Madapu, Kishore K. ; Dhara, S. ; Tyagi, A.K.
Author_Institution :
Surface & Nanosci. Div., Indira Gandhi Centre for Atomic Res., Kalpakkam, India
fYear :
2011
fDate :
28-30 Nov. 2011
Firstpage :
553
Lastpage :
555
Abstract :
GaN nanostruetures with different morphologies are grown on few layer graphene (FLG) as template, using chemical- vapor-deposition technique in a self catalytic process using the large surface energy of graphene. Raman and photoluminescence studies reveal wurtzite GaN phase. Morphologies of these nanostructures varied depending on the number of layers in each template. Photoluminescence study reveals that growth occurs without deterioration of FLG layers and no incorporation of carbon in GaN nanostructures.
Keywords :
III-V semiconductors; Raman spectra; catalysis; chemical vapour deposition; gallium compounds; nanofabrication; nanostructured materials; photoluminescence; semiconductor growth; surface energy; wide band gap semiconductors; C; FLG layers; GaN; Raman spectroscopy; chemical-vapor-deposition technique; nanostructures; photoluminescence; self catalytic process; surface energy; wurtzite phase; Nanostructures; Photoluminescence; GaN; Raman spectroscopy; gallium nitride; graphene; nanostructures; photoluminescence;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nanoscience, Engineering and Technology (ICONSET), 2011 International Conference on
Conference_Location :
Chennai
Print_ISBN :
978-1-4673-0071-1
Type :
conf
DOI :
10.1109/ICONSET.2011.6168029
Filename :
6168029
Link To Document :
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