• DocumentCode
    3535457
  • Title

    Population inversion in step quantum wells at 10 /spl mu/m wavelength

  • Author

    Zhang, X. ; Haddad, G.I. ; Sun, J.P. ; Kushaa, A. ; Sung, C.Y. ; Norris, T.

  • Author_Institution
    Solid State Electron. Lab., Michigan Univ., Ann Arbor, MI, USA
  • fYear
    1995
  • fDate
    19-21 June 1995
  • Firstpage
    118
  • Lastpage
    119
  • Abstract
    In this work, it is shown that population inversion can be achieved between subbands in a step quantum well with a high width ratio based on carrier capture processes. It is known that in quantum well structures, emission of LO phonons is the main carrier capture mechanism. The LO-phonon scattering rate depends on the Froelich matrix element and the overlap of the initial and final wave functions squared. In a step quantum well with a high ratio of the step width to the well width the wave function overlap of the state in the step and the state in the well is reduced and thus a longer capture time results. If the carriers of the state in the well can be removed by an adjacent quantum well by tunneling, population inversion can be realized.
  • Keywords
    phonons; population inversion; semiconductor quantum wells; tunnelling; 10 micron; AlGaAs-GaAs; Froelich matrix element; IR processes; LO phonons emission; LO-phonon scattering rate; capture time; carrier capture processes; population inversion; step quantum wells; tunneling; wave functions; Gallium arsenide; Laboratories; Optical scattering; Particle scattering; Phonons; Solid state circuits; Stationary state; Stimulated emission; Tunneling; Wave functions;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference, 1995. Digest. 1995 53rd Annual
  • Conference_Location
    Charlottesville, VA, USA
  • Print_ISBN
    0-7803-2788-8
  • Type

    conf

  • DOI
    10.1109/DRC.1995.496294
  • Filename
    496294