DocumentCode
3535457
Title
Population inversion in step quantum wells at 10 /spl mu/m wavelength
Author
Zhang, X. ; Haddad, G.I. ; Sun, J.P. ; Kushaa, A. ; Sung, C.Y. ; Norris, T.
Author_Institution
Solid State Electron. Lab., Michigan Univ., Ann Arbor, MI, USA
fYear
1995
fDate
19-21 June 1995
Firstpage
118
Lastpage
119
Abstract
In this work, it is shown that population inversion can be achieved between subbands in a step quantum well with a high width ratio based on carrier capture processes. It is known that in quantum well structures, emission of LO phonons is the main carrier capture mechanism. The LO-phonon scattering rate depends on the Froelich matrix element and the overlap of the initial and final wave functions squared. In a step quantum well with a high ratio of the step width to the well width the wave function overlap of the state in the step and the state in the well is reduced and thus a longer capture time results. If the carriers of the state in the well can be removed by an adjacent quantum well by tunneling, population inversion can be realized.
Keywords
phonons; population inversion; semiconductor quantum wells; tunnelling; 10 micron; AlGaAs-GaAs; Froelich matrix element; IR processes; LO phonons emission; LO-phonon scattering rate; capture time; carrier capture processes; population inversion; step quantum wells; tunneling; wave functions; Gallium arsenide; Laboratories; Optical scattering; Particle scattering; Phonons; Solid state circuits; Stationary state; Stimulated emission; Tunneling; Wave functions;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference, 1995. Digest. 1995 53rd Annual
Conference_Location
Charlottesville, VA, USA
Print_ISBN
0-7803-2788-8
Type
conf
DOI
10.1109/DRC.1995.496294
Filename
496294
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