DocumentCode
3535486
Title
Investigation of GaAs/AlGaAs multiquantum well infrared detector
Author
Jin-Min Li ; Hai-Qun Zheng ; Yi-Ping Zeng ; Mei-Ying Kong
Author_Institution
Inst. of Semicond., Acad. Sinica, Beijing, China
fYear
1995
fDate
19-21 June 1995
Firstpage
124
Lastpage
125
Abstract
In this article, we present the experimental results of a 130 unit GaAs/AlGaAs quantum well infrared detector line-array with front-side normal illumination based on a waveguide of a doubly periodic grating coupler. The detector array has achieved a broad spectral response by optimizing the quantum well structures and device processes.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; infrared detectors; semiconductor quantum wells; GaAs-AlGaAs; doubly periodic grating coupler; front-side normal illumination; intersubband transitions; line array; multiquantum well infrared detector; spectral response; waveguide; Absorption; Arrayed waveguide gratings; Etching; Gallium arsenide; Infrared detectors; Molecular beam epitaxial growth; Photoconductivity; Quantum well devices; Sensor arrays; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference, 1995. Digest. 1995 53rd Annual
Conference_Location
Charlottesville, VA, USA
Print_ISBN
0-7803-2788-8
Type
conf
DOI
10.1109/DRC.1995.496297
Filename
496297
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