DocumentCode
3535534
Title
Comparative analysis of MODFET and MESFET amplifiers
Author
Sonti, V. J K Kishor ; Kannan, V.
Author_Institution
Sathyabama Univ., Chennai, India
fYear
2011
fDate
28-30 Nov. 2011
Firstpage
593
Lastpage
596
Abstract
In this paper, a comparative analysis of MODFET and MESFET amplifiers was carried out. The equivalent circuit model is used for the MESFET amplifier, whereas device simulation model is used for the MODFET amplifier and the gain of the amplifiers was analyzed .In this device simulation 50 ohm resistance is used at the terminations and W = 200 uni, L=0.25um as device dimensions with Vds =15v and Vgs = -3v. In this paper the work is carried out using PSPICE AD simulation software.
Keywords
HEMT circuits; MESFET circuits; amplifiers; semiconductor device models; MESFET amplifiers; MODFET amplifiers; PSPICE AD simulation software; device simulation model; equivalent circuit model; resistance 50 ohm; voltage -3 V; voltage 15 V; Gallium nitride; HEMTs; Logic gates; MESFETs; MODFETs; Microwave amplifiers; Performance evaluation; AlGaN/GaN; Equivalent Circuit; MESFET; MODFET; gain; transconductance;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanoscience, Engineering and Technology (ICONSET), 2011 International Conference on
Conference_Location
Chennai
Print_ISBN
978-1-4673-0071-1
Type
conf
DOI
10.1109/ICONSET.2011.6168040
Filename
6168040
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