DocumentCode :
3535606
Title :
Study of interface behavior on dielectric properties of epoxy-silica nanocomposites
Author :
Veena, M. ; Renukappa, N.M. ; Shivakumar, K.N. ; Seetharamu, S.
Author_Institution :
Dept. of Electron. & Commun., Sri Jayachamarajendra Coll. of Eng., Mysore, India
fYear :
2012
fDate :
24-28 July 2012
Firstpage :
1
Lastpage :
4
Abstract :
This paper focused on epoxy-based nanodielectric composites with 5, 10, 15 and 20 wt.% of silica constituents prepared using simple mechanical mixing technique along with required curing cycles. The experimentally clarified dielectric constant (ε´) and dissipation factor (tanδ) are influenced by addition of nanosilica is discussed on the basis of the three core interface model proposed for interaction zones. The interfacial region (interaction zone) is likely to be pivotal in controlling properties, the bonding and crosslinking between epoxy-silica was characterized using Fourier transform Infrared Spectroscopy (FTIR) and Differential Scanning Calorimetery (DSC). In addition, Positron Annihilation Lifetime Spectroscopy (PALS) is used to determine free volume of nanocomposites.
Keywords :
Fourier transform spectra; differential scanning calorimetry; infrared spectra; materials preparation; mixing; nanocomposites; permittivity; positron annihilation; silicon compounds; DSC; FTIR; Fourier transform infrared spectroscopy; PALS; SiO2; core interface model; dielectric properties; differential scanning calorimetery; dissipation factor; epoxy-based nanodielectric composites; epoxy-silica nanocomposites; experimentally clarified dielectric constant; interaction zones; interface behavior; interfacial region; mechanical mixing technique; nanosilica; positron annihilation lifetime spectroscopy; Degradation; Dielectrics; Fabrication; Materials; OWL; Positrons; Silicon compounds; Dielectric constant; Fourier Transform Infrared Spectroscopy; Free volume; Glass transition temperature; tanδ;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Properties and Applications of Dielectric Materials (ICPADM), 2012 IEEE 10th International Conference on the
Conference_Location :
Bangalore
ISSN :
2160-9225
Print_ISBN :
978-1-4673-2852-4
Type :
conf
DOI :
10.1109/ICPADM.2012.6318951
Filename :
6318951
Link To Document :
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