Title :
Finite element stress modeling of InGaAsP/InP lasers
Author :
Mishkevich, V. ; Jordan, A.S. ; Swaminathan, V. ; Geary, J.M.
Author_Institution :
AT&T Bell Labs., Whippany, NJ, USA
Abstract :
InGaAsP/InP lasers operating at 1.3/spl mu/m and 1.55/spl mu/m wavelength are used currently in many long haul and local loop communication systems. In addition to demands on the performance characteristics of these lasers, their long-term reliability under the operating conditions should also be satisfactory. Strain is one of many factors that can affect laser reliability. The principal objective of the current work is to construct processing related thermal stresses in InP based laser structures.
Keywords :
III-V semiconductors; finite element analysis; gallium arsenide; indium compounds; optical communication equipment; semiconductor device models; semiconductor device reliability; semiconductor lasers; thermal stresses; 1.3 micrometre; 1.55 micrometre; InGaAsP-InP; finite element stress modeling; local loop communication systems; long haul communication systems; long-term reliability; operating conditions; performance characteristics; processing related thermal stresses; Dielectrics; Finite element methods; Geometrical optics; Indium phosphide; Laser modes; Laser theory; Physics; Solid modeling; Tensile stress; Thermal stresses;
Conference_Titel :
Device Research Conference, 1995. Digest. 1995 53rd Annual
Conference_Location :
Charlottesville, VA, USA
Print_ISBN :
0-7803-2788-8
DOI :
10.1109/DRC.1995.496307
