Title :
Imaging spatial and spectral inhomogenous spontaneous emission in high power semiconductor lasers
Author :
Bethea, C.G. ; Fang, W. ; Chen, Y.K. ; Chuang, S.L.
Author_Institution :
AT&T Bell Labs., Murray Hill, NJ, USA
Abstract :
Spectrally and spatially resolved infrared microscopy has been used to study the steady state internal physics of semiconductor laser diodes. By imaging the longitudinal intra-cavity spontaneous emission profiles of both long wavelength bulk and MQW CMBH Fabry-Perot InGaAsP/InP lasers lasing at 1.48/spl mu/m, we observed the longitudinal spatial hole burning above the lasing threshold.
Keywords :
Fabry-Perot resonators; III-V semiconductors; gallium arsenide; indium compounds; laser cavity resonators; optical hole burning; optical microscopy; semiconductor lasers; spontaneous emission; 1.48 micrometre; Fabry-Perot lasers; InGaAsP-InP; MQW; high power semiconductor lasers; infrared microscopy; inhomogenous spontaneous emission; lasing threshold; longitudinal intra-cavity spontaneous emission; longitudinal spatial hole burning; spatially resolved techniques; spectrally resolved techniques; steady state internal physics; Diode lasers; Fabry-Perot; Infrared spectra; Microscopy; Optical imaging; Physics; Quantum well devices; Spatial resolution; Spontaneous emission; Steady-state;
Conference_Titel :
Device Research Conference, 1995. Digest. 1995 53rd Annual
Conference_Location :
Charlottesville, VA, USA
Print_ISBN :
0-7803-2788-8
DOI :
10.1109/DRC.1995.496308
