DocumentCode
3535662
Title
Comparison of thermal response of GMR sensor subjected to HBM and CDM transients
Author
Yang, Yizhang ; Asheghi, Mehdi
Author_Institution
Dept. Of Mech. Eng., Carnegie Mellon Univ., Pittsburgh, PA, USA
fYear
2004
fDate
19-23 Sept. 2004
Firstpage
1
Lastpage
5
Abstract
The thermal response of the GMR sensor during the ESD pulse is investigated using finite element model. The simulation compares the transient temperature rise in GMR sensor when they are subjected to the Human Body Model (HBM) and Charged-Device Model (CDM) waveforms. The results indicate that the ESD threshold damage for GMR head depends on both the thermal time constant and the ESD transient current.
Keywords
electrostatic discharge; finite element analysis; giant magnetoresistance; heat transfer; magnetoresistive devices; CDM transient; ESD pulse; GMR sensor; HBM transient; charged-device model; finite element model; human body model; thermal response; Antiferromagnetic materials; Electrostatic discharge; Magnetic fields; Magnetic heads; Magnetic materials; Material storage; Robust stability; Robustness; Thermal sensors; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical Overstress/Electrostatic Discharge Symposium, 2004. EOS/ESD '04.
Conference_Location
Grapevine, TX
Print_ISBN
978-1-5853-7063-4
Electronic_ISBN
978-1-5853-7063-4
Type
conf
DOI
10.1109/EOSESD.2004.5272586
Filename
5272586
Link To Document