DocumentCode
3535675
Title
A novel amorphous silicon thin film transistor for AMLCDs
Author
Young Byun ; den Beer, W. ; Moshi Yang ; Tieer Gu
Author_Institution
OIS Opt. Imaging Syst. Inc., Northville, MI, USA
fYear
1995
fDate
19-21 June 1995
Firstpage
160
Lastpage
161
Abstract
In AMLCD (Active Matrix Liquid Crystal display) applications minimizing Cgs, the parasitic capacitance between gate and source of a-Si TFT, reduces flicker, image retention and gray scale nonuniformity and makes it possible to further increase display size and resolution. Cgs is generally minimized by shrinking the device size, e.g. by using ion doping for the n/sup +/ contact formation in a self-aligned trilayer type TFT. We present a TFT with a novel geometry to reduce Cgs and photosensitivity.
Keywords
amorphous semiconductors; capacitance; elemental semiconductors; liquid crystal displays; silicon; thin film transistors; AMLCDs; Si; active matrix liquid crystal display; display size; flicker; gray scale nonuniformity; image retention; parasitic capacitance; photosensitivity; resolution; self-aligned trilayer type; thin film transistor; Active matrix liquid crystal displays; Amorphous silicon; Image resolution; Lighting; Liquid crystal displays; Optical imaging; Parasitic capacitance; Shape; Thin film transistors; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference, 1995. Digest. 1995 53rd Annual
Conference_Location
Charlottesville, VA, USA
Print_ISBN
0-7803-2788-8
Type
conf
DOI
10.1109/DRC.1995.496311
Filename
496311
Link To Document