Title :
A novel amorphous silicon thin film transistor for AMLCDs
Author :
Young Byun ; den Beer, W. ; Moshi Yang ; Tieer Gu
Author_Institution :
OIS Opt. Imaging Syst. Inc., Northville, MI, USA
Abstract :
In AMLCD (Active Matrix Liquid Crystal display) applications minimizing Cgs, the parasitic capacitance between gate and source of a-Si TFT, reduces flicker, image retention and gray scale nonuniformity and makes it possible to further increase display size and resolution. Cgs is generally minimized by shrinking the device size, e.g. by using ion doping for the n/sup +/ contact formation in a self-aligned trilayer type TFT. We present a TFT with a novel geometry to reduce Cgs and photosensitivity.
Keywords :
amorphous semiconductors; capacitance; elemental semiconductors; liquid crystal displays; silicon; thin film transistors; AMLCDs; Si; active matrix liquid crystal display; display size; flicker; gray scale nonuniformity; image retention; parasitic capacitance; photosensitivity; resolution; self-aligned trilayer type; thin film transistor; Active matrix liquid crystal displays; Amorphous silicon; Image resolution; Lighting; Liquid crystal displays; Optical imaging; Parasitic capacitance; Shape; Thin film transistors; Voltage;
Conference_Titel :
Device Research Conference, 1995. Digest. 1995 53rd Annual
Conference_Location :
Charlottesville, VA, USA
Print_ISBN :
0-7803-2788-8
DOI :
10.1109/DRC.1995.496311
