Title :
Polarization instability and mode partition noise in vertical-cavity surface-emitting lasers
Author :
Kuksenkov, D.V. ; Temkin, H.
Author_Institution :
Dept. of Electr. Eng., Colorado State Univ., Fort Collins, CO, USA
Abstract :
We present, for the first time, a study of polarization instability induced RIN (relative intensity noise) enhancement in VCSELs. Devices under study are nominally single-mode top-emitting GaAs/AlGaAs VCSELs with an operating wavelength of 850 nm. Current confinement and gain guiding are obtained by double proton implantation. Detailed results of bit error rate measurement on free-space optical links with polarization-unstable VCSELs and a rate-equation based model of the polarization instability are presented.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; laser modes; laser noise; laser stability; light polarisation; optical links; optical transmitters; semiconductor device noise; semiconductor lasers; surface emitting lasers; 850 nm; GaAs-AlGaAs; RIN; bit error rate measurement; current confinement; double proton implantation; free-space optical links; gain guiding; mode partition noise; operating wavelength; polarization instability; rate-equation based model; relative intensity noise enhancement; single-mode top-emitting GaAs/AlGaAs VCSELs; vertical-cavity surface-emitting lasers; Frequency; Laser modes; Laser noise; Optical fiber polarization; Optical noise; Optical polarization; Optical surface waves; Space vector pulse width modulation; Surface emitting lasers; Vertical cavity surface emitting lasers;
Conference_Titel :
Device Research Conference, 1995. Digest. 1995 53rd Annual
Conference_Location :
Charlottesville, VA, USA
Print_ISBN :
0-7803-2788-8
DOI :
10.1109/DRC.1995.496316
