An active driving circuit for high-voltage high-power SI-thyristor

Author

Iida, Katsuji ; Ochiai, Hideki ; Mechi, Abdallah ; Matsuo, Hirofumi ; Ishizuka, Yoichi

Author_Institution

Toyo Electr. MFG Co. Ltd., Kanagawa, Japan

Volume

2

fYear

1997

fDate

22-27 Jun 1997

Firstpage

835

Abstract

The high-voltage, high-power SI-Thyristor (SI-Thy) is developed and is being produced to be applied in many power electronics applications. Compared with GTO, the new product has the characteristics of high speed turn on-off low loss and high switching frequency at high voltage. Because of the special characteristics of the SI-Thyristor, its control with the conventional driving circuit used for the GTO is insufficient. Then, a new and compact gate drive is developed. It is composed of a driving circuit capable of driving at high-voltage with high-speed and high-frequency and an isolated controlled power supply. The driving circuit is presented and proposed as an efficient tool for the SI-Thyristor control

Keywords

driver circuits; switching circuits; thyristors; SI-thyristor; active driving circuit; driving circuit; high speed turn on-off; high switching frequency; high-power; high-voltage; isolated controlled power supply; low loss; power electronics applications; Cathodes; Circuits; Cities and towns; Electrons; Impurities; Niobium; Power electronics; Switching frequency; Thyristors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics Specialists Conference, 1997. PESC '97 Record., 28th Annual IEEE

Conference_Location

St. Louis, MO

ISSN

0275-9306

Print_ISBN

0-7803-3840-5

Type

conf

DOI

10.1109/PESC.1997.616817

Filename

616817