Simulation of the IGBT switching-off with the charge extraction model

Author

Schumann, Jorg ; Bohmer, Jurgen ; Eckel, Hans-Gunter

Author_Institution

Univ. of Rostock, Rostock, Germany

fYear

2013

fDate

2-6 Sept. 2013

Firstpage

1

Lastpage

10

Abstract

The Charge Extraction Model is a high voltage IGBT model for the turn-off behaviour under extreme switching conditions to evaluate different gate driving circuits. This model is a physical founded IGBT model and considers the carrier distribution and the current profiles during the switching-off in one dimension through the device. It can be used for circuit simulations and shows some advantages in relation to standard circuit models or finite element based device ones. In this paper, the charge extraction model is used to understand the current redistribution of paralleled IGBT, to master the gate drive under variable gate current profiles and to show effects concerning the carrier distribution before turning-off.

Keywords

current distribution; driver circuits; electric charge; finite element analysis; insulated gate bipolar transistors; power field effect transistors; carrier distribution; charge extraction model; circuit simulation; current redistribution; extreme switching condition; finite element based device; gate driving circuit; high voltage IGBT model; standard circuit model; variable gate current profile; Computational modeling; Insulated gate bipolar transistors; Integrated circuit modeling; Logic gates; Numerical models; Switches; Switching circuits; Circuit Simulation; MOS device; Switching-off;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics and Applications (EPE), 2013 15th European Conference on

Conference_Location

Lille

Type

conf

DOI

10.1109/EPE.2013.6631960

Filename

6631960