A novel SOI CBiCMOS compatible device structure for analog and mixed-mode circuits

Author

Chan, Mansun ; Fung, Samuel K H ; Hu, Chenming ; Ko, Ping K.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA

fYear

1995

fDate

6-10 Nov 1995

Firstpage

40

Lastpage

43

Abstract

A novel SOI CBiCMOS compatible structure has been developed which can be operated as both an MOS and lateral bipolar transistor. During the MOS operation, the new structure provides a very effective body contact to eliminate the floating-body effects such as I-V kink, low breakdown voltage and the anomalous subthreshold characteristics. In the bipolar mode, the structure provides a very efficient base contact with low base resistance compared to most existing base contact schemes

Keywords

BiCMOS analogue integrated circuits; BiCMOS integrated circuits; MOSFET; bipolar transistors; mixed analogue-digital integrated circuits; silicon-on-insulator; I-V kink; MOS transistor; SOI CBiCMOS compatible device; analog circuits; base contact; base resistance; body contact; breakdown voltage; floating-body effect; lateral bipolar transistor; mixed-mode circuits; subthreshold characteristics; Bipolar transistors; CMOS technology; Circuits; Contact resistance; Electrodes; Fabrication; Immune system; Implants; MOSFETs; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics and VLSI, 1995. TENCON '95., IEEE Region 10 International Conference on

Print_ISBN

0-7803-2624-5

Type

conf

DOI

10.1109/TENCON.1995.496330

Filename

496330