Title :
A new charge pumping model for polysilicon thin film transistors
Author :
Kim, Kee-Jong ; Kim, Seong-Gyun ; Park, Won-Kyu ; Kim, Ohyun
Author_Institution :
Dept. of Electron. & Electr. Eng., Pohang Univ. of Sci. & Technol., South Korea
Abstract :
A charge pumping model considering bulk states in polysilicon thin film transistors has been developed. Here, we define the threshold voltage as a minimum voltage to fill the untrapped states within an applied pulse width. And the threshold voltage including the emission energy level was obtained as a function of depth. It shows that the calculated current of this model is more consistent with the measured one rather than the current or interface state model
Keywords :
elemental semiconductors; semiconductor device models; silicon; thin film transistors; Si; bulk states; charge pumping model; current; electron trapping; emission energy levels; polysilicon thin film transistor; threshold voltage; Charge carrier processes; Charge pumps; Electron traps; Energy states; Interface states; MOSFETs; Space vector pulse width modulation; Tail; Thin film transistors; Threshold voltage;
Conference_Titel :
Microelectronics and VLSI, 1995. TENCON '95., IEEE Region 10 International Conference on
Print_ISBN :
0-7803-2624-5
DOI :
10.1109/TENCON.1995.496332
