Title :
Ar laser annealing of sputtered Si films for TFT applications
Author :
Zhen, Sun ; Tong, K.Y. ; Cho, H.C. ; Wong, Y.W. ; Tsang, L.F. ; Chan, P.W.
Author_Institution :
Dept. of Electron. Eng., Hong Kong Polytech. Univ., Hong Kong
Abstract :
We have shown that r.f. sputtered Si films crystallized by cw Ar + laser irradiation is a suitable material for fabrication of polysilicon TFTs. Polycrystalline Si film with proper annealing condition has a high Hall mobility up to 120 cm2/V-s in p-type samples. The dependence of dark conductivity on temperature suggests that much reduced trap density in laser-annealed Si films is the reason for the high mobility, despite the fact that the grain size is only 30 nm
Keywords :
Hall mobility; dark conductivity; elemental semiconductors; laser beam annealing; semiconductor growth; semiconductor thin films; silicon; sputtered coatings; thin film transistors; Ar; CW Ar+ laser annealing; Hall mobility; RF sputtered Si film; Si; crystallization; dark conductivity; fabrication; grain size; polycrystalline p-type Si; polysilicon TFT; trap density; Annealing; Argon; Conducting materials; Crystalline materials; Crystallization; Hall effect; Optical device fabrication; Optical materials; Semiconductor films; Thin film transistors;
Conference_Titel :
Microelectronics and VLSI, 1995. TENCON '95., IEEE Region 10 International Conference on
Print_ISBN :
0-7803-2624-5
DOI :
10.1109/TENCON.1995.496335
