Title :
Localised bandgap engineering in III-V semiconductor quantum well structures for optoelectronic devices
Author :
Weiss, Bernard L.
Author_Institution :
Dept. of Electron. & Electr. Eng., Surrey Univ., Guildford, UK
Abstract :
In this paper the processing, properties and applications of interdiffusion in III-V semiconductor quantum well structures for optoelectronic device applications are reviewed. The interdiffusion process and its influence on the characteristics of a range of III-V quantum well structures are discussed. The use of this process for the post growth modification of QW structures is also discussed, including the tuning of laser characteristics. In addition, the use of the process for three dimensional structuring of devices is important for the isolation in optical integrated circuits
Keywords :
III-V semiconductors; chemical interdiffusion; energy gap; integrated optoelectronics; optoelectronic devices; quantum well lasers; semiconductor quantum wells; III-V semiconductor quantum well structures; interdiffusion; isolation; lasers; localised bandgap engineering; optical integrated circuits; optoelectronic devices; three dimensional structuring; Circuit optimization; III-V semiconductor materials; Integrated optics; Laser tuning; Optical devices; Optical tuning; Optoelectronic devices; Photonic band gap; Quantum well lasers; Semiconductor lasers;
Conference_Titel :
Microelectronics and VLSI, 1995. TENCON '95., IEEE Region 10 International Conference on
Print_ISBN :
0-7803-2624-5
DOI :
10.1109/TENCON.1995.496336
