Title :
PL study of (Al,Ga)As epilayers grown on (100), (111)B and vicinal (111)B GaAs substrates
Author :
Kuang, Guokui ; Wang, Zhanguo ; Liang, Jibeng ; Xu, Bo ; Zhu, Zhanping ; Zou, Lyu-fan
Author_Institution :
Inst. of Semicond., Acad. Sinica, Beijing, China
Abstract :
For the first time, we have grown (Al,Ga)As/GaAs epilayers which show some remarkable quantum wire characteristics-red shift as much as 98 meV-on vicinal (111)B GaAs substrate. For comparison, the epilayers were also deposited on (100) and (111)B substrates simultaneously. But the PL results of these three samples are very different-we explained these PL results with a model based on growth dynamics and drew a conclusion that steps on (111)B surface can play a very important role in crystal growth
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; photoluminescence; semiconductor epitaxial layers; semiconductor growth; semiconductor quantum wires; (100) substrate; (111)B substrate; (Al,Ga)As epilayers; AlGaAs-GaAs; GaAs substrates; crystal growth; growth dynamics; photoluminescence; quantum wire; red shift; surface steps; vicinal (111)B substrate; Aluminum alloys; Gallium arsenide; Laser excitation; Superlattices; Temperature; Wire;
Conference_Titel :
Microelectronics and VLSI, 1995. TENCON '95., IEEE Region 10 International Conference on
Print_ISBN :
0-7803-2624-5
DOI :
10.1109/TENCON.1995.496338
