Title :
ZnSe blue LED with nitrogen-doped ZnSe grown in a Se-rich condition by low-pressure OMCVD
Author :
Yeh, Min-Yen ; Lee, Ming-Kwei
Author_Institution :
Dept. of Electron. Eng., Yung-Ta Junior Coll. of Technol. & Commerce, Ping-Tung, Taiwan
Abstract :
Pure-blue emission of the as-grown ZnSe diode at 300 K was observed. The EL spectrum was dominated by a band-to-band emission peak at 2.68 eV with a half-width 52 meV. The results were consistent with that of the photoluminescence spectrum. These indicated that high-quality ZnSe blue LEDs were obtained under the developed growth condition
Keywords :
CVD coatings; II-VI semiconductors; electroluminescence; light emitting diodes; nitrogen; photoluminescence; semiconductor growth; zinc compounds; 2.68 eV; 300 K; ZnSe:N; band-to-band emission; blue LED; electroluminescence spectrum; growth; low-pressure OMCVD; nitrogen-doped ZnSe; photoluminescence spectrum; Chemical vapor deposition; Conductivity; Hydrogen; Light emitting diodes; Molecular beam epitaxial growth; Nitrogen; Optical device fabrication; Temperature; Weight control; Zinc compounds;
Conference_Titel :
Microelectronics and VLSI, 1995. TENCON '95., IEEE Region 10 International Conference on
Print_ISBN :
0-7803-2624-5
DOI :
10.1109/TENCON.1995.496339
