Title :
Gate oxide failures due to anomalous stress from HBM ESD testers
Author :
Duvvury, Charvaka ; Steinhoff, Robert ; Boselli, Gianluca ; Reddy, Vijay ; Kunz, Hans ; Marum, Steve ; Cline, Roger
Author_Institution :
Texas Instrum. Inc., Dallas, TX, USA
Abstract :
An unexpected and serious effect from the ESD HBM tester causing gate oxide failure in input buffers is reported in this paper. The most significant finding is that this unwarranted stress comes from the tester relay and gives rise to false HBM evaluation. In this paper we investigate this new effect on gate oxide reliability and establish the safe control limits for proper output of the state-of-the-art ESD simulator waveforms.
Keywords :
CMOS integrated circuits; electrostatic discharge; failure analysis; integrated circuit reliability; integrated circuit testing; CMOS technology; HBM ESD testers; anomalous stress; gate oxide failures; gate oxide reliability; input buffers; state-of-the-art ESD simulator waveforms; tester relay; CMOS logic circuits; CMOS technology; Degradation; Electrostatic discharge; Instruments; Logic devices; Protection; Stress; Testing; Voltage;
Conference_Titel :
Electrical Overstress/Electrostatic Discharge Symposium, 2004. EOS/ESD '04.
Conference_Location :
Grapevine, TX
Print_ISBN :
978-1-5853-7063-4
Electronic_ISBN :
978-1-5853-7063-4
DOI :
10.1109/EOSESD.2004.5272621
