Title :
Impurity induced disordering produced lateral optical confinement in AlGaAs and InGaAs (on GaAs) quantum well waveguides
Author :
Li, Alex T H ; Lo, E.M. ; Li, E.
Author_Institution :
Dept. of Electr. & Electron. Eng., Hong Kong Univ., Hong Kong
Abstract :
The impurity induced disordering technique is employed on an AlGaAs/GaAs quantum well optical waveguide to provide lateral optical confinement. The modal propagation constant and field profile are analysed using an improved Fourier decomposition method. The single mode operating region is given in terms of thickness of quantum well layers
Keywords :
III-V semiconductors; aluminium compounds; chemical interdiffusion; gallium arsenide; impurities; indium compounds; optical fabrication; optical waveguides; semiconductor quantum wells; AlGaAs-GaAs; Fourier decomposition; InGaAs-GaAs; field profile; impurity induced disordering; lateral optical confinement; modal propagation constant; quantum well waveguides; single mode operation; Gallium arsenide; Impurities; Indium gallium arsenide; Optical device fabrication; Optical refraction; Optical variables control; Optical waveguides; Partial differential equations; Propagation constant; Refractive index;
Conference_Titel :
Microelectronics and VLSI, 1995. TENCON '95., IEEE Region 10 International Conference on
Print_ISBN :
0-7803-2624-5
DOI :
10.1109/TENCON.1995.496342
