DocumentCode
3536039
Title
Photovoltaic characteristics of CuInS2/CdS heterojunction
Author
Park, Gye Choon ; Lee, Jin ; Chung, Hae-Duck ; Jeong, Woon-Jo ; Cho, Jae-Cheol ; Jeong, Young-Kun ; Yoo, Yong-Tek
Author_Institution
Dept. of Electr. Eng., Mokpo Nat. Univ., South Korea
fYear
1995
fDate
6-10 Nov 1995
Firstpage
99
Lastpage
102
Abstract
CuInS2/CdS heterojunction has been fabricated by depositing CdS thin film with dopant In on ternary compound CuInS2 thin film. Its best conversion efficiency was 5.66% under the illumination of 100 mW/cm2, and its series resistance and lattice mismatch was 5.1 Ω and 3.2% respectively. Besides, 4-layer structure heterojunction of low ρ-CuInS2/high ρ-CuInS 2/high ρ-CdS/low ρ-CdS has been fabricated. Its bast conversion efficiency was 8.25% under the illumination of 100 mW/cm2, and its series resistance and lattice mismatch was 4.3 Ω and 2.8% respectively
Keywords
II-VI semiconductors; cadmium compounds; copper compounds; indium compounds; p-n heterojunctions; photovoltaic effects; semiconductor doping; solar cells; ternary semiconductors; 4-layer structure heterojunction; 4.3 ohm; 5.1 ohm; 5.66 percent; 8.25 percent; CdS thin film deposition; CuInS2-CdS:In; In dopant; conversion efficiency; lattice mismatch; p-n heterojunction; photovoltaic characteristics; series resistance; ternary compound CuInS2 thin film; Conductive films; Conductivity measurement; Electrical resistance measurement; Electromagnetic measurements; Heat treatment; Heterojunctions; Photovoltaic systems; Solar power generation; Transistors; X-ray scattering;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronics and VLSI, 1995. TENCON '95., IEEE Region 10 International Conference on
Print_ISBN
0-7803-2624-5
Type
conf
DOI
10.1109/TENCON.1995.496346
Filename
496346
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