Title :
GaAs tri-step high-low doping channel field effect transistor
Author :
Liu, Wen-Chau ; Tsai, Jung-Hui ; Wen, Lih ; Thei, Kong-Beng ; Wu, Chang-Zn ; Lour, Wen-Shung ; Tzu, Yuan ; Liu, Rong-Chau
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
Abstract :
A fabricated camel-gate FET with a tri-step doping channel exhibits a large drain current density of >750 mA/mm. Furthermore, the relatively voltage-independent transconductance is as high as 220 mS/mm and the applied gate voltage is of up to +1.5 V. A 1.5×100 μm2 gate dimension device was found to have a fT of about 30 GHz with very low input capacitance
Keywords :
III-V semiconductors; capacitance; current density; doping profiles; gallium arsenide; millimetre wave field effect transistors; 1.5 V; 220 mS/mm; 30 GHz; EHF; GaAs; MM-wave CAMFET; camel-gate FET; field effect transistor; low input capacitance; tri-step high-low doping channel FET; voltage-independent transconductance; Alloying; Current density; Diodes; Doping; FETs; Gallium arsenide; Metal-insulator structures; Molecular beam epitaxial growth; Transconductance; Voltage;
Conference_Titel :
Microelectronics and VLSI, 1995. TENCON '95., IEEE Region 10 International Conference on
Print_ISBN :
0-7803-2624-5
DOI :
10.1109/TENCON.1995.496348
