Electrodeposition of Ni-Si Schottky barriers

Data on electrodeposited Ni on Si for different Si substrate resistivities is presented. It is shown that the Schottky barriers formed are of high quality with low ideality factor and very small reversed leakage. The versatility of electrodeposition on Si has been demonstrated. Size dependence and edge effects are discussed, both for the electrodeposition process and the electrical properties. It is also shown that electrodeposition on Si can be used on high resistivity substrates without back contact.