Title :
1/f bulk phenomena noise theory for GaAs MESFETs
Author :
Yan, K.T. ; Forbes, Leonard
Abstract :
A 1/f noise model based on the distributed equivalent circuit technique for evaluating the semi-insulating substrate is proposed. Our model shows that the 1/f noise is a bulk phenomena with localized high frequency variations and long range low frequency fluctuations with the lowest frequency being constrained by the thickness of the material
Keywords :
1/f noise; III-V semiconductors; Schottky gate field effect transistors; equivalent circuits; gallium arsenide; semiconductor device models; semiconductor device noise; 1/f bulk phenomena noise theory; 1/f noise model; GaAs; MESFETs; distributed equivalent circuit technique; localized HF variations; long range LF fluctuations; semi-insulating substrate; Circuit noise; Fluctuations; Frequency; Gallium arsenide; Impedance; Low-frequency noise; MESFETs; Semiconductor device noise; Substrates; Voltage;
Conference_Titel :
Microelectronics and VLSI, 1995. TENCON '95., IEEE Region 10 International Conference on
Print_ISBN :
0-7803-2624-5
DOI :
10.1109/TENCON.1995.496349
