Title :
Low-voltage diode-configured sige:C HBT triggered ESD power clamps using a raised extrinsic base 200/285 GHz (fT/fMAX) SiGe:C HBT device
Author :
Voldman, Steven H. ; Gebreselasie, Ephrem G.
Author_Institution :
IBM Microelectron., Essex Junction, VT, USA
Abstract :
As the faster transistors are produced in BiCMOS SiGe technology, low voltage trigger ESD networks will be required to achieve good ESD protection. Diode-configured SiGe HBT trigger elements are used in a SiGe C HBT power clamp network in a 200/285 GHz fT/fMAX silicon germanium heterojunction bipolar transistor (HBT) technology in a 0.13-propm CMOS technology base.
Keywords :
Ge-Si alloys; electrostatic discharge; heterojunction bipolar transistors; low-power electronics; millimetre wave bipolar transistors; trigger circuits; BiCMOS technology; C HBT triggered ESD power clamps; HBT device; SiGe; frequency 200 GHz; frequency 285 GHz; heterojunction bipolar transistor; low-voltage trigger ESD network; raised extrinsic base; BiCMOS integrated circuits; CMOS technology; Clamps; Diodes; Electrostatic discharge; Germanium silicon alloys; Heterojunction bipolar transistors; Low voltage; Protection; Silicon germanium;
Conference_Titel :
Electrical Overstress/Electrostatic Discharge Symposium, 2004. EOS/ESD '04.
Conference_Location :
Grapevine, TX
Print_ISBN :
978-1-5853-7063-4
Electronic_ISBN :
978-1-5853-7063-4
DOI :
10.1109/EOSESD.2004.5272633
