Title :
Two-dimensional simulation of kink-related backgating effect in GaAs MESFETs
Author :
Horio, Kazushige ; Usami, Kimiyoshi
Author_Institution :
Fac. of Syst. Eng., Shibaura Inst. of Technol., Omiya, Japan
Abstract :
2-D simulation of backgating effect in GaAs MESFETs is made in which impact ionization of carriers and deep donors “EL2” in the substrate are considered. The kink-related backgating is reproduced, which is qualitatively consistent with recent experiments. The mechanism is attributed to the change of EL2´s nature by capturing holes which are generated by impact ionization and flow into the substrate
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; impact ionisation; semiconductor device models; 2D simulation; EL2; GaAs; MESFET; deep donors; impact ionization; kink-related backgating effect; sidegating effect; substrate; two-dimensional simulation; Charge carrier processes; Electron emission; Gallium arsenide; Impact ionization; MESFETs; Modeling; Poisson equations; Schottky barriers; Systems engineering and theory; Threshold voltage;
Conference_Titel :
Microelectronics and VLSI, 1995. TENCON '95., IEEE Region 10 International Conference on
Print_ISBN :
0-7803-2624-5
DOI :
10.1109/TENCON.1995.496350
