DocumentCode :
3536091
Title :
Spin-filtering of non-equilibrium holes in a semiconductor-ferromagnet hybrid structure
Author :
Haq, E. ; Banerjee, T. ; Siekman, M.H. ; Lodder, J.C. ; Jansen, R.
Author_Institution :
MESA Inst. for Nanotechnol., Twente Univ., Enschede, Netherlands
fYear :
2005
fDate :
4-8 April 2005
Firstpage :
1201
Lastpage :
1202
Abstract :
Although spin-dependent transmission of hot electrons has been well addressed, the complementary spin-transport of non-equilibrium holes (below the Fermi level) has never been studied. Using a semiconductor/ferromagnet hybrid structure, it is shown here that a thin ferromagnetic film acts as an efficient spin-filter for holes. This has important implications not only in understanding several non-equilibrium phenomena, but also in realizing complementary building blocks for use in spintronics. To investigate hole spin transport, Ballistic Hole Magnetic Microscopy (BHMM) has been developed. Here, the tip of an STM is positively biased such that unpolarized hot holes are injected into a ferromagnetic metal stack grown on top of a p-type Si semiconductor. A Schottky contact between Au and p-Si acts as the collector energy barrier for the transmitted holes. Hot hole transport with energies of 0.3 to 2 eV below the Fermi level has been studied for a p-Si/Au/Co stack with varying Co thickness. The hole attenuation length has been found to be short and increases from 6-10 Å in the energy range 0.8-2 eV. For a NiFe/Au/Co trilayer, the hole transmission is clearly spin dependent with a large magnetocurrent (MC) of 130%.
Keywords :
Fermi level; Schottky barriers; ballistic transport; cobalt; elemental semiconductors; ferromagnetic materials; galvanomagnetic effects; gold; hot carriers; iron alloys; magnetic force microscopy; magnetic multilayers; magnetic thin films; metallic thin films; nickel alloys; scanning tunnelling microscopy; semiconductor-metal boundaries; silicon; spin polarised transport; 0.3 to 2 eV; 6 to 10 angstrom; Fermi level; NiFe-Au-Co; NiFe/Au/Co trilayer; STM tip; Schottky contact; Si-Au-Co; ballistic hole magnetic microscopy; collector energy barrier; ferromagnetic metal stack; hole attenuation length; hole spin transport; hot hole transport; magnetocurrent; nonequilibrium holes; p-type Si semiconductor; semiconductor-ferromagnet hybrid structure; spin-filtering; spintronics; thin ferromagnetic film; unpolarized hot holes; Attenuation; Charge carrier processes; Energy barrier; Gold; Hot carriers; Magnetic films; Magnetoelectronics; Micromagnetics; Schottky barriers; Semiconductor films;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Magnetics Conference, 2005. INTERMAG Asia 2005. Digests of the IEEE International
Print_ISBN :
0-7803-9009-1
Type :
conf
DOI :
10.1109/INTMAG.2005.1464030
Filename :
1464030
Link To Document :
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