DocumentCode :
3536099
Title :
Fabrication of three terminal devices using double barrier magnetic tunnel junctions
Author :
Nagahama, T. ; Yuasa, S. ; Suzuki, Y.
fYear :
2005
fDate :
4-8 April 2005
Firstpage :
1203
Lastpage :
1204
Abstract :
Double barrier magnetic tunnel transistors were prepared and the magnetoresistance (MR) and magnetocurrent effect (MC)were measured. The films were deposited on SiO2 substrate by sputtering. The structure of the films is SiO-substrate/buffer/IrMn/CoFe(2 nm)/Ru(0.85 nm)/CoFe(2 nm:drain)/Al-O(1.2 nm)/NiFe(5 nm:base)/Al-O(1.2 nm)/CoFe(3 nm:source)/IrMn(1.5 nm)/Ru(5 nm). (Hereafter "drain layer" is denoted as "D", "base layer" is "B" and "source layer" is "S".) Al-O tunnel barriers were formed by plasma oxidation of Al. The films were fabricated into 3 terminal device using photolithography, Ar ion etching for metallic layers and wet etching for Al-O layers. The area of D/B junction is 40×90 μm2, and B/S junction area is 10×10 μm2. The product of resistance and area (RA) is 1.8 MΩμm2 for D/B junction and 0.2 MΩμm for B/S junction, respectively. MR measurements were done by conventional 4-probe method at 10 mV. MC measurements were done by using two Keithley 2400 source meters.
Keywords :
Schottky barriers; aluminium compounds; cobalt alloys; iridium alloys; iron alloys; magnetic multilayers; magnetic thin film devices; magnetic thin films; magnetic tunnelling; magnetoresistance; manganese alloys; metallic thin films; oxidation; photolithography; ruthenium; sputter deposition; sputter etching; thin film transistors; tunnel transistors; 1.2 nm; 1.5 nm; 10 mV; 2 nm; 3 nm; 4-probe method; 5 nm; Al-O tunnel barriers; Keithley 2400 source meters; SiO-IrMn-CoFe-Ru-CoFe-Al-O-NiFe-Al-O-CoFe-IrMn-Ru; base layer; double barrier magnetic tunnel junctions; drain layer; ion etching; magnetocurrent; magnetoresistance; metallic layers; photolithography; plasma oxidation; source layer; sputtering; three terminal devices; wet etching; Electrical resistance measurement; Fabrication; Magnetic films; Magnetic tunneling; Plasma applications; Plasma devices; Plasma sources; Sputtering; Tunneling magnetoresistance; Wet etching;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Magnetics Conference, 2005. INTERMAG Asia 2005. Digests of the IEEE International
Print_ISBN :
0-7803-9009-1
Type :
conf
DOI :
10.1109/INTMAG.2005.1464031
Filename :
1464031
Link To Document :
بازگشت