InGaP/GaAs HBT DC-20 GHz distributed amplifier with compact ESD protection circuits

Author

Ma, Yintat ; Li, G.P.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Univ. of California, Irvine, CA, USA

fYear

2004

fDate

19-23 Sept. 2004

Firstpage

1

Lastpage

7

Abstract

This paper presents design considerations and implementation of InGaP/GaAs HBT DC-20 GHz distributed amplifier with compact ESD protection circuits. The inherit benefits of both bandwidth and ESD robustness of distributed amplifiers are first compared to those of single-ended feedback amplifiers. Next, novel on-chip ESD protection circuits are introduced, featuring low capacitance loading for wide bandwidth, low leakage, and good linearity under high RF power. This paper discusses the principle of operation and performance of the ESD protection circuits, and the RF loading to the distributed amplifier. The RF performance and ESD robustness of the distributed amplifier are also discussed.

Keywords

III-V semiconductors; distributed amplifiers; electrostatic discharge; feedback amplifiers; gallium arsenide; heterojunction bipolar transistors; indium compounds; microwave bipolar transistors; ESD protection circuit; HBT distributed amplifier; InGaP-GaAs; RF power; capacitance loading; frequency 20 GHz; single-ended feedback amplifier; Bandwidth; Circuits; Distributed amplifiers; Electrostatic discharge; Feedback amplifiers; Gallium arsenide; Heterojunction bipolar transistors; Protection; Radio frequency; Robustness;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical Overstress/Electrostatic Discharge Symposium, 2004. EOS/ESD '04.

Conference_Location

Grapevine, TX

Print_ISBN

978-1-5853-7063-4

Electronic_ISBN

978-1-5853-7063-4

Type

conf

DOI

10.1109/EOSESD.2004.5272636

Filename

5272636