5kW phase-shifted full-bridge converter with current doubler using normally-off SiC JFETs designed for 98% efficiency

Author

Torok, Leonardo ; Beczkowski, Szymon ; Munk-Nielsen, Stig

Author_Institution

Dept. of Energy Technol., Aalborg Univ., Aalborg, Denmark

fYear

2013

fDate

2-6 Sept. 2013

Firstpage

1

Lastpage

9

Abstract

In this paper a 5kW step-down converter for low-voltage high-current application is presented using normally-off SiC JFETs as high voltage power switches, operating with efficiency close to 98%. Different low voltage side rectification solutions and loss estimations are also presented. As results show higher power density and efficiency can be achieved in medium- or high-power DC-DC applications by replacing silicone power devices with SiC alternatives.

Keywords

DC-DC power convertors; field effect transistor switches; junction gate field effect transistors; power semiconductor switches; silicon compounds; switching convertors; wide band gap semiconductors; SiC; current doubler; efficiency 98 percent; high-power DC-DC application; high-voltage power switches; loss estimation; low-voltage high-current application; low-voltage side rectification solution; medium-power DC-DC application; normally-off silicon carbide JFET; phase-shifted full-bridge converter; power 5 kW; power density; silicone power devices; step-down converter; Inductors; JFETs; Logic gates; Rectifiers; Schottky diodes; Silicon carbide; Switches; JFET; Wide band gap devices; energy efficiency; high frequency power converter; silicon carbide (SiC);

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics and Applications (EPE), 2013 15th European Conference on

Conference_Location

Lille

Type

conf

DOI

10.1109/EPE.2013.6631987

Filename

6631987