Title :
Research on the structure and electrical property of PI/MWNTs ternary hybrid films
Author :
Mingyan Zhang ; Yuliang Ma ; Haixia Chen ; Zheng Li ; Qiong Wu
Author_Institution :
Key Lab. of Eng. Dielectr. & Its Applic., Harbin Univ. of Sci. & Technol., Harbin, China
Abstract :
In this paper, The polyamic acid/MWNTs (PAA/MWNTs) hybrid solution were synthesized by polymerization process with 4,4´-Oxydianiline(ODA) and Pyromellitic dianhydride (PMDA) in N,N-dimethylacetamide (DMAc) in which MWNTs (modified by Fenton reagents) had been dissolved. After the imidization, PI/MWNTs ternary hybrid films were obtained. Fourier transform infrared spectroscopic (FTIR) spectra of modified MWNTs indicated that hydroxy and carboxy were introduced to MWNTs after modification. The surface and cross-section morphologies of the films were investigated by scanning electron microscopy (SEM). Dielectric properties of PI/MWNTs ternary hybrid films were studied including dielectric permittivity (ξR), dielectric loss and volume resistivity. The results indicated that the dielectric permittivity (ξR) and loss were enhanced in PI/MWNTs ternary hybrid films as compared to the PI films.
Keywords :
Fourier transform spectra; carbon nanotubes; dielectric losses; infrared spectra; permittivity; polymer films; polymerisation; scanning electron microscopy; surface morphology; 4,4´-oxydianiline; C; DMAc; FTIR spectra; Fourier transform infrared spectroscopy; N,N-dimethylacetamide; ODA; PI-MWNT ternary hybrid films; carboxy; cross-section morphology; dielectric loss; dielectric permittivity; dielectric property; electrical insulating material; electrical property; mutilwalled carbon nanotubes; polyamic acid; polymerization process; pyromellitic dianhydride; structure property; surface morphology; volume resistivity; Films; Furnaces; Microelectronics; Polymers; Surface morphology; Surface treatment; Transforms; PI/MWNTs; dielectric properties; ternary hybrid films;
Conference_Titel :
Properties and Applications of Dielectric Materials (ICPADM), 2012 IEEE 10th International Conference on the
Conference_Location :
Bangalore
Print_ISBN :
978-1-4673-2852-4
DOI :
10.1109/ICPADM.2012.6319007
