Title :
Short circuit behavior of the Bi-mode Insulated Gate Transistor (BIGT)
Author :
Mari, Jorge ; Corvasce, C. ; Rahimo, Munaf ; Kopta, A. ; Storasta, Liutauras
Author_Institution :
GE Global Res., Garching, Germany
Abstract :
The BIGT is a Reverse Conducting IGBT device which combines functionality of a high power IGBT and fast diode on a single chip. In this paper, an investigation of the IGBT mode short circuit performance of the BIGT is carried out. The behavior of the BIGT under IGBT mode short circuit conditions is illustrated by measurements on a 3.3kV 1500A HiPak1 module and then supported by circuit and detailed device physics simulations. The short circuit conditions of type II and type III are discussed, with the variations introduced due to the gate control of the BIGT when operated in reverse conducting mode. Comparison to standard IGBTs with Soft-Punch-Through (SPT) technology in a HiPak2 module is also provided.
Keywords :
insulated gate bipolar transistors; power semiconductor devices; short-circuit currents; BIGT; HiPak2 module; bimode insulated gate transistor; current 1500 A; fast diode; gate control; high power IGBT; reverse conducting IGBT device; short circuit behavior; short circuit conditions; single chip; soft punch through technology; voltage 3.3 kV; Circuit faults; Insulated gate bipolar transistors; Light emitting diodes; Logic gates; Semiconductor diodes; Standards; Switches; Device characterization; Fault tolerance; IGBT; New switching devices; Semiconductor device;
Conference_Titel :
Power Electronics and Applications (EPE), 2013 15th European Conference on
Conference_Location :
Lille
DOI :
10.1109/EPE.2013.6631996
