Formation of CdTe diode detectors by laser irradiation in water

Author

Aoki, T. ; Gnatyuk, V.A. ; Vlasenko, O.I. ; Levytskyi, S.N.

Author_Institution

Res. Inst. of Electron., Shizuoka Univ., Hamamatsu, Japan

fYear

2010

fDate

Oct. 30 2010-Nov. 6 2010

Firstpage

3785

Lastpage

3788

Abstract

The method of laser-induced solid phase doping of a thin surface layer of high resistivity CdTe crystals has been developed and M-p-n structured In/CdTe/Au diodes have been fabricated. Semi-insulating p-like CdTe crystals pre-coated with an In dopant film were irradiated with nanosecond laser pulses in water environment that made it possible to introduce and activate In dopant atoms with high concentration and form a steep p-n junction in the surface region of the crystal. Multiple laser irradiation of the samples from the In-coated side increased forward current of the diodes and decreased reverse one. The fabricated diode detectors demonstrate high energy resolution.

Keywords

cadmium compounds; indium compounds; p-n junctions; semiconductor counters; semiconductor diodes; semiconductor lasers; semiconductor materials; CdTe; CdTe diode detectors; In-CdTe-Au; dopant atoms; dopant film; fabricated diode detectors; high resistivity CdTe crystals; laser-induced solid phase doping; multiple laser irradiation; nanosecond laser pulses; semiinsulating p-like CdTe crystal; steep p-n junction; surface region; thin surface layer; Crystals; Detectors; Doping; Gold; Radiation effects; Semiconductor diodes; Semiconductor lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Nuclear Science Symposium Conference Record (NSS/MIC), 2010 IEEE

Conference_Location

Knoxville, TN

ISSN

1095-7863

Print_ISBN

978-1-4244-9106-3

Type

conf

DOI

10.1109/NSSMIC.2010.5874520

Filename

5874520