DocumentCode
3536338
Title
Deep-submicron MOSFET modeling for circuit simulation
Author
Jeng, Min-Chie ; Liu, Zhihong ; Cheng, Yuhua
Author_Institution
Cadence Design Syst. Inc., San Jose, CA, USA
fYear
1995
fDate
6-10 Nov 1995
Firstpage
204
Lastpage
209
Abstract
This paper describes recent activities and trends in MOSFET modeling. Both the DC and AC aspects of MOSFET models are covered. Due to the more stringent requirements, test procedures for both analog and digital applications have been proposed. Existing SPICE models are evaluated against these tests. In particular, BSIM3 and MOS9, the two mostly discussed candidates for the standard deep-submicron MOSFET model, are compared
Keywords
MOSFET; SPICE; circuit analysis computing; semiconductor device models; AC aspects; BSIM3; DC aspects; MOS9; SPICE models; analog applications; circuit simulation; deep-submicron MOSFET modeling; digital applications; test procedures; Circuit simulation; Circuit testing; Computational modeling; Foundries; Integrated circuit modeling; MOSFET circuits; Production; SPICE; Switching circuits; Tuned circuits;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronics and VLSI, 1995. TENCON '95., IEEE Region 10 International Conference on
Print_ISBN
0-7803-2624-5
Type
conf
DOI
10.1109/TENCON.1995.496374
Filename
496374
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