Title :
An energy balance equation based 0.1 μm MOSFET model including velocity overshoot behavior
Author_Institution :
Memory Div., Samsung Electron. Co., Kyungki-Do, South Korea
Abstract :
In order to evaluate the velocity overshoot phenomenon in the deep submicron MOS devices, the energy balance equation should be incorporated with the drift-diffusion equation that includes thermoelectric diffusion. This paper presents an analytical current model for deep submicron MOS devices by solving the energy balance equation. Our model results show good agreement with experimental results. We have successfully derived the drain current model composed of drift and thermoelectric currents
Keywords :
MOSFET; carrier mobility; semiconductor device models; 0.1 mum; MOSFET model; analytical current model; deep submicron MOS devices; drain current model; drift-diffusion equation; energy balance equation based model; thermoelectric diffusion; velocity overshoot behavior; Analytical models; Equations; MOS devices; MOSFET circuits; Scattering; Silicon; Temperature; Thermoelectric devices; Thermoelectricity; Voltage;
Conference_Titel :
Microelectronics and VLSI, 1995. TENCON '95., IEEE Region 10 International Conference on
Print_ISBN :
0-7803-2624-5
DOI :
10.1109/TENCON.1995.496376
