Title :
Circuit theoretical approach for one-dimensional quantum mechanics problems
Author :
Sanada, Hirofumi ; Nagai, Nobuo
Author_Institution :
Res. Inst. for Electron. Sci., Hokkaido Univ., Sapporo, Japan
Abstract :
This paper presents a simple, general and accurate analytic-numerical method to solve one-dimensional quantum mechanics problems. The method is based on the analogy of wave propagation between the transmission-line and the potential structure, and is applicable to potential barriers, wells, and superlattices. A guideline for designing new quantum effect devices can be easily obtained
Keywords :
III-V semiconductors; aluminium compounds; equivalent circuits; gallium compounds; indium compounds; interface states; iterative methods; quantum interference devices; semiconductor quantum wells; semiconductor superlattices; transmission line theory; tunnelling; InAs-GaSb-AlSb; InAs/GaSb/AlSb systems; analytic-numerical method; circuit theoretical approach; complex-valued transmission-line; effective mass model; eigenstates; equivalent circuit representation; one-dimensional quantum mechanics problems; potential barriers; potential structure; quantum effect device design; superlattices; tunneling phenomena; two band model; wave propagation analogy; wells; Equivalent circuits; Guidelines; Partial differential equations; Potential well; Propagation constant; Quantum mechanics; Steady-state; Transmission line matrix methods; Transmission lines; Tunneling;
Conference_Titel :
Microelectronics and VLSI, 1995. TENCON '95., IEEE Region 10 International Conference on
Print_ISBN :
0-7803-2624-5
DOI :
10.1109/TENCON.1995.496379
