DocumentCode :
3536426
Title :
Micro yield modeling for IC processes
Author :
Wong, Allan Y. ; Krott, Loren C.
Author_Institution :
Fairchild Res. Centre, Nat. Semicond. Corp., Santa Clara, CA, USA
fYear :
1995
fDate :
6-10 Nov 1995
Firstpage :
230
Lastpage :
233
Abstract :
A methodology to model IC yield variations among products and processes has been developed. This methodology decomposes the product yield into a non-random systematic yield term Ys and a random yield term Yr, and models them independently. The systematic yield portion of the product yield is extracted by multiple die yield analysis, while the random portion of the product yield is modeled using test chip data and product layout analysis of yield sensitive areas. Furthermore, the micro yield model is capable of not only making real time product yield projections, but is also capable of providing confidence intervals around those projections. Experimental results show good agreement between the predicted and actual product yields
Keywords :
integrated circuit yield; semiconductor process modelling; statistical analysis; IC processes; IC yield variations; confidence intervals; defect density; micro yield modeling; model methodology; multiple die yield analysis; nonrandom systematic yield; product layout analysis; random yield; real time product yield projections; test chip data; Circuit faults; Computer displays; Data mining; Equations; Integrated circuit modeling; Manufacturing; Predictive models; Semiconductor device modeling; Statistical distributions; System testing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microelectronics and VLSI, 1995. TENCON '95., IEEE Region 10 International Conference on
Print_ISBN :
0-7803-2624-5
Type :
conf
DOI :
10.1109/TENCON.1995.496380
Filename :
496380
Link To Document :
بازگشت