DocumentCode
3536439
Title
3D Monte Carlo simulations of pixelated CdZnTe detectors under high photon fluxes
Author
Rodrigues, Miesher L. ; He, Zhong
Author_Institution
Nucl. Eng. & Radiol. Sci. Dept., Univ. of Michigan, Ann Arbor, MI, USA
fYear
2010
fDate
Oct. 30 2010-Nov. 6 2010
Firstpage
3836
Lastpage
3838
Abstract
In this paper a direct approach for 3D simulation of pulse waveforms induced on CdZnTe detector with 11×11 pixelated anodes is presented. In high flux applications the signal induction from the drift of charge carriers and the variation of space charge can no longer be decoupled. Calculation of induced pulse waveforms on electrodes can be achieved by determining the charge induction from the Shockley-Ramo theorem and electron and hole transport from the continuity equations coupled with Poisson´s equation. A complete 3D simulation code has been developed coupling Monte Carlo modeling of photon interactions with matter, electric field and weighting potential using the finite element method (FEM), electric field perturbations due to space charge carriers using the method of images (or mirror images), and electron and hole transport taking into account diffusion and trapping of both charge carriers. The entire calculation is carried out for a number of interaction positions in the detector in each time step, thus providing the overall field due to both space charge accumulation and external applied bias. A large number of finite cubes (136,803,300) within the detector volume of 15×15×10mm3 have been considered in these simulations under varying photon fluxes. Experimental studies using a Cs-137 irradiator and a digital waveform acquisition system in continuous mode will provide verification of simulation results.
Keywords
II-VI semiconductors; Monte Carlo methods; Poisson equation; cadmium compounds; carrier mobility; finite element analysis; semiconductor counters; simulation; 3D Monte Carlo simulations; 3D simulation code; CdZnTe; Cs-137 irradiator; Monte Carlo modeling; Poisson equation; Shockley-Ramo theorem; charge carrier diffusion; charge carrier drift; charge carrier trapping; charge induction; continuity equations; digital waveform acquisition system; electric field perturbations; electron transport; finite element method; high flux applications; high photon fluxes; hole transport; induced pulse waveform calculation; mirror images method; pixelated CdZnTe detectors; pixelated anodes; pulse waveform 3D simulation; signal induction; space charge carriers; space charge variation; weighting potential;
fLanguage
English
Publisher
ieee
Conference_Titel
Nuclear Science Symposium Conference Record (NSS/MIC), 2010 IEEE
Conference_Location
Knoxville, TN
ISSN
1095-7863
Print_ISBN
978-1-4244-9106-3
Type
conf
DOI
10.1109/NSSMIC.2010.5874530
Filename
5874530
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