Title :
Hot electron induced channel length shortening model and its impact on HEIP in PMOS
Author :
Park, J.T. ; Kim, Y.T. ; Kim, D.K. ; Hong, S.T. ; Yu, C.G.
Author_Institution :
Dept. of Electron. Eng., Inchon Univ., South Korea
Abstract :
A new analytical model based on a pseudo two dimensional model is presented for the hot electron induced channel length shortening (ΔLH) of PMOSFET. It has been founded that ΔLH is a logarithmic function of both the stress time and the degradation of punchthrough voltage, and is also a linear function of the degradation of the drain current. ΔLH can be predicted from the measurement of the gate current (ΔLH∝Ign) and can thus be used for the current calculation of a degraded PMOSFET
Keywords :
MOSFET; electron traps; hot carriers; semiconductor device models; HEIP; PMOSFET; analytical model; bidirectional stress; current calculation; drain current degradation; gate current characteristics; hot electron induced channel length shortening model; hot electron induced punchthrough; pseudo two dimensional model; punchthrough voltage degradation; stress time; trapped electron charges; Analytical models; Current measurement; Degradation; Electron traps; Equations; Hot carriers; MOSFET circuits; Parameter extraction; Stress measurement; Voltage;
Conference_Titel :
Microelectronics and VLSI, 1995. TENCON '95., IEEE Region 10 International Conference on
Print_ISBN :
0-7803-2624-5
DOI :
10.1109/TENCON.1995.496382
