Title :
Anomalous narrow width behavior of deep sub-micrometer MOSFETs with LOCOS isolation
Author :
Fung, Samuel K H ; Chan, Mansun ; Ko, Ping K.
Author_Institution :
Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci, & Technol., Clear Water Bay, Hong Kong
Abstract :
The effect of scaling down the channel width on the threshold voltage of deep submicron MOSFETs with LOCOS isolation has been investigated. The channel doping is increased excessively as the oxide thickness scales down in modern deep submicron technology. This results in threshold voltage reduction as channel width is scaled-down. The trend is verified by both experiment and process simulation
Keywords :
MOSFET; isolation technology; semiconductor process modelling; semiconductor technology; LOCOS isolation; MOSFETs; channel doping; channel width scaling; deep submicron technology; inverse narrow width effect; oxide thickness; process simulation; threshold voltage; Boron; Doping; Implants; Isolation technology; Leakage current; MOS devices; MOSFET circuits; Predictive models; Semiconductor process modeling; Threshold voltage;
Conference_Titel :
Microelectronics and VLSI, 1995. TENCON '95., IEEE Region 10 International Conference on
Print_ISBN :
0-7803-2624-5
DOI :
10.1109/TENCON.1995.496384
