Title :
Effects of processing fluctuations on a 0.1 μm MOSFET
Author :
Rowlands, David ; Dimitrijev, Sima
Author_Institution :
Sch. of Microelectron. Eng., Griffith Univ., Brisbane, Qld., Australia
Abstract :
Fluctuations in the processing parameters can lead to a separation between the gate and the source/drain extensions in MOSFETs. A 0.1 μm MOSFET was simulated with 5%, and 10% separation and it was found that the transconductance was reduced, the threshold voltage was not significantly changed, and that there was no effect on the breakdown because the device has suffered punchthrough rather than avalanche breakdown
Keywords :
MOSFET; semiconductor process modelling; 0.1 micron; MOSFET; breakdown; processing fluctuations; punchthrough; separation; simulation; threshold voltage; transconductance; Avalanche breakdown; Breakdown voltage; Calibration; Current measurement; Fluctuations; Hot carriers; MOSFET circuits; Medical simulation; Threshold voltage; Transconductance;
Conference_Titel :
Microelectronics and VLSI, 1995. TENCON '95., IEEE Region 10 International Conference on
Print_ISBN :
0-7803-2624-5
DOI :
10.1109/TENCON.1995.496385
