Title :
Simulation of LF noises FET in the program «Micro-Cap» in THE «Transient analysis» mode
Author_Institution :
St.-Petersburg State Polytech. Univ., St.-Petersburg, Russia
Abstract :
The model of the modulation LF noise source which allows to simulate noise in the "Micro-Cap" program in the "Transient analysis" mode is given. Results of simulation of the flicker noise of FET are shown, when using this noise source.
Keywords :
electronic engineering computing; field effect transistors; flicker noise; transient analysis; FET; MicroCap program; flicker noise simulation; modulation LF noise source; transient analysis mode;
Conference_Titel :
Actual Problems of Electron Devices Engineering (APEDE), 2012 International Conference on
Conference_Location :
Saratov
Print_ISBN :
978-1-4673-2096-2
DOI :
10.1109/APEDE.2012.6478011
