DocumentCode :
3536498
Title :
Charge trapping properties of N2O-treated NH3-nitrided oxides under high-field stress
Author :
Xu, Zeng ; Lai, P.T. ; Ng, W.T.
Author_Institution :
Dept. of Electr. & Electron. Eng., Hong Kong Univ., Hong Kong
fYear :
1995
fDate :
6-10 Nov 1995
Firstpage :
256
Lastpage :
259
Abstract :
A new technique, namely N2O treatment of NH3-nitrided oxides (NON20), is proposed to fabricate thin oxide. It is shown that the N2O treatment is superior to conventional reoxidation step in improving charge trapping property and interface hardness of oxides under high-field stress
Keywords :
MOS capacitors; MOS integrated circuits; VLSI; characteristics measurement; electron traps; integrated circuit measurement; interface states; nitridation; MOS capacitors; MOS circuits; N2O; NH3; VLSI; charge trapping properties; high-field stress; interface hardness; Annealing; Capacitance-voltage characteristics; Current measurement; Dielectric substrates; Electron traps; Interface states; MOS capacitors; Nitrogen; Stress; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microelectronics and VLSI, 1995. TENCON '95., IEEE Region 10 International Conference on
Print_ISBN :
0-7803-2624-5
Type :
conf
DOI :
10.1109/TENCON.1995.496387
Filename :
496387
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3536498
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