Title :
Dielectric breakdown by constant current injection
Author_Institution :
Microelectron. Centre, Acad. Sinica, Beijing, China
Abstract :
Dielectric breakdown of SiO2 film is investigated with the constant injection current technique to determine whether a current density or an injected charge density is the critical parameter for breakdown
Keywords :
MOS capacitors; dielectric thin films; electric breakdown; elemental semiconductors; silicon; silicon compounds; MOS capacitors; Si-SiO2; constant current injection; critical breakdown parameter; current density; dielectric breakdown; dielectric thin films; injected charge density; Conductivity; Current density; Design for quality; Dielectric breakdown; Electric breakdown; MOS capacitors; Microelectronics; Substrates; Testing; Voltage;
Conference_Titel :
Microelectronics and VLSI, 1995. TENCON '95., IEEE Region 10 International Conference on
Print_ISBN :
0-7803-2624-5
DOI :
10.1109/TENCON.1995.496389
