• DocumentCode
    3536519
  • Title

    Dielectric breakdown by constant current injection

  • Author

    Wang, S.F.

  • Author_Institution
    Microelectron. Centre, Acad. Sinica, Beijing, China
  • fYear
    1995
  • fDate
    6-10 Nov 1995
  • Firstpage
    263
  • Lastpage
    265
  • Abstract
    Dielectric breakdown of SiO2 film is investigated with the constant injection current technique to determine whether a current density or an injected charge density is the critical parameter for breakdown
  • Keywords
    MOS capacitors; dielectric thin films; electric breakdown; elemental semiconductors; silicon; silicon compounds; MOS capacitors; Si-SiO2; constant current injection; critical breakdown parameter; current density; dielectric breakdown; dielectric thin films; injected charge density; Conductivity; Current density; Design for quality; Dielectric breakdown; Electric breakdown; MOS capacitors; Microelectronics; Substrates; Testing; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronics and VLSI, 1995. TENCON '95., IEEE Region 10 International Conference on
  • Print_ISBN
    0-7803-2624-5
  • Type

    conf

  • DOI
    10.1109/TENCON.1995.496389
  • Filename
    496389
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3536519