• DocumentCode
    3536535
  • Title

    A new gate current measurement technique for the characterization of hot-carrier-induced degradation in MOSFETs

  • Author

    Leang, S.E.

  • Author_Institution
    Centre for Integrated Circuit Failure Anal. & Reliability, Nat. Univ. of Singapore, Singapore
  • fYear
    1995
  • fDate
    6-10 Nov 1995
  • Firstpage
    266
  • Lastpage
    269
  • Abstract
    The floating-gate technique has been used extensively for studying hot-carrier effects in MOSFETs. However, this technique can cause the device to degrade if the measurement time is too long. A new method is proposed, which allows the Ig-Vg curves of the MOSFETs to be determined in a shorter time, thereby reducing the risk of degrading the test device during the measurement process
  • Keywords
    MOSFET; characteristics measurement; electric current measurement; hot carriers; semiconductor device reliability; Ig-Vg curves; MOSFETs; gate current measurement technique; hot-carrier-induced degradation; measurement time; Capacitance measurement; Current measurement; Degradation; Hot carrier effects; Hot carriers; Integrated circuit measurements; MOSFETs; Parasitic capacitance; Testing; Time measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronics and VLSI, 1995. TENCON '95., IEEE Region 10 International Conference on
  • Print_ISBN
    0-7803-2624-5
  • Type

    conf

  • DOI
    10.1109/TENCON.1995.496390
  • Filename
    496390
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3536535