Title :
High field stress induced leakage current in 3.0-nm NO-grown gate dielectric films
Author :
Yao, Ze-Qiang ; Harrison, H.B. ; Dimitrijev, Sima ; Yeow, Y.T.
Author_Institution :
AWA Microelectron. Pty. Ltd., Homebush, NSW, Australia
Abstract :
In this paper, stress induced leakage current (SILC) has been investigate in 3.0-nm nitric oxide (NO) grown gate dielectric films. MOS capacitors with 3.0-nm NO-grown films have much lower SILC compared to those reported results with N2O oxides or pure oxides under high field stresses
Keywords :
EPROM; MOS capacitors; MOS memory circuits; dielectric thin films; integrated circuit testing; leakage currents; 3 nm; EEPROMS; MOS capacitors; NO; SILC; gate dielectric films; high field stresses; stress induced leakage current; Australia; Dielectric films; EPROM; Electron traps; Leakage current; MOS capacitors; Microelectronics; Stress; Tunneling; Voltage;
Conference_Titel :
Microelectronics and VLSI, 1995. TENCON '95., IEEE Region 10 International Conference on
Print_ISBN :
0-7803-2624-5
DOI :
10.1109/TENCON.1995.496391
