Title :
Nitridation of sputtered silicon dioxide films
Author :
Jelenkovic, Emil V. ; Tong, K.Y.
Author_Institution :
Dept. of Electron. Eng., Hong Kong Polytech. Univ., Hung Hom, Hong Kong
Abstract :
It is shown that nitridation of sputtered oxide by reactive sputtering can give a hardened oxide-silicon interface with reduced interface states generation after stress. SIMS analysis has confirmed the existence of SiN peak close to the oxide/silicon interface. A stacked SiO2/SiOxNy structure is discussed relative to charge trapping, leakage current and mid-gap voltage shift
Keywords :
MIS devices; dielectric thin films; electron traps; interface states; leakage currents; nitridation; secondary ion mass spectroscopy; silicon compounds; sputtering; thin film transistors; SIMS analysis; SiO2-SiON; charge trapping; interface states generation; leakage current; mid-gap voltage shift; nitridation; reactive sputtering; Aluminum; Annealing; Interface states; Nitrogen; Semiconductor films; Silicon compounds; Sputtering; Stability; Stress; Voltage;
Conference_Titel :
Microelectronics and VLSI, 1995. TENCON '95., IEEE Region 10 International Conference on
Print_ISBN :
0-7803-2624-5
DOI :
10.1109/TENCON.1995.496392
