• DocumentCode
    3536629
  • Title

    Preliminary results on elimination of secondary phases in Cd1−xZnxTe using MVB growth

  • Author

    Datta, Amlan ; Jones, Kelly ; Swain, Santosh ; Lynn, Kelvin

  • Author_Institution
    Center for Mater. Res., Washington State Univ., Pullman, WA, USA
  • fYear
    2010
  • fDate
    Oct. 30 2010-Nov. 6 2010
  • Firstpage
    3918
  • Lastpage
    3922
  • Abstract
    Reducing the amount of secondary phases in as grown Cd1-xZnxTe material is one of the biggest challenges in modern crystal growth industry. Results of the post processing experiments as well as its short comes would be described in this paper. Consequences of various experiments performed to decrease the amount of secondary phases by changing the initial charge compositions and the growth parameters would be discussed and statistics would be shown.
  • Keywords
    II-VI semiconductors; annealing; cadmium compounds; crystal growth from melt; semiconductor growth; wide band gap semiconductors; zinc compounds; Cd1-xZnxTe; MVB growth; annealing; charge compositions; crystal growth; modified vertical Bridgman growth; secondary phases; Annealing; Conductivity; Crystals; Detectors; Zinc;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nuclear Science Symposium Conference Record (NSS/MIC), 2010 IEEE
  • Conference_Location
    Knoxville, TN
  • ISSN
    1095-7863
  • Print_ISBN
    978-1-4244-9106-3
  • Type

    conf

  • DOI
    10.1109/NSSMIC.2010.5874549
  • Filename
    5874549
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3536629